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Infineon Technologies CY7C136-55NXI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon Technologies CY7C136-55NXI

MPNCY7C136-55NXI
Obsolete
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C136-55NXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage4.5V ~ 5.5V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Dual Port, Asynchronous
Access time55 ns
Memory size16Kbit
Memory formatSRAM
Case52-BQFP
Memory organization2K x 8
Write cycle time - word, page55ns