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Infineon Technologies CY7C1354B-166BGC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1354B-166BGC 9Mbit SDR SRAM, 166MHz, 119-PBGA

MPNCY7C1354B-166BGC
Obsolete

Infineon Technologies CY7C1354B-166BGC synchronous SDR SRAM, 9Mbit, 256K x 36, 166 MHz, 3.5 ns access, 3.135V-3.6V, 119-PBGA, 0°C to 70°C.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1354B-166BGC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage3.135V ~ 3.6V
Clock frequency166 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageBag
TechnologySRAM - Synchronous, SDR
Access time3.5 ns
Memory size9Mbit
Memory formatSRAM
Case119-BGA
Memory organization256K x 36

Product details

9Mbit synchronous SDR SRAM — 166 MHz, 3.5 ns access

The CY7C1354B-166BGC is a 9Mbit synchronous SRAM organized as 256K x 36, clocked at 166 MHz with a 3.5 ns access time. This is a single-data-rate (SDR) part — it transfers one data word per clock edge, making it a fit for mid-speed cache or buffer applications where the controller does not need the double-data-rate bandwidth.

Package and board-fit — 119-ball PBGA

Housed in a 119-ball PBGA (14x22 mm body), this is a fine-pitch BGA that demands a multi-layer PCB for fan-out. The 3.5 ns access time at 166 MHz means the address-to-data latency is about half a clock cycle — the controller must meet the setup/hold windows at the SRAM's inputs, which the datasheet's AC timing tables define per the 166 MHz speed bin.

Frequently asked questions

What is the memory organization and clock speed of CY7C1354B-166BGC?

It is a 9Mbit SRAM organized as 256K words by 36 bits, clocked at 166 MHz with a 3.5 ns access time.