200 MHz synchronous SRAM with NoBL — what the 2.8 ns access buys you
The Infineon CY7C1350G-200AXC is a 4.5 Mbit synchronous SRAM organized 128K x 36, built on the NoBL (No Bus Latency) architecture. That means the memory can sustain back-to-back reads and writes on every clock cycle without inserting dead cycles for bus turnaround — a trait that matters when you are feeding a high-throughput datapath like a network processor or a DSP pipeline. The 200 MHz clock rate paired with a 2.8 ns access time gives the system architect a predictable timing budget: the address-to-data valid window is tight enough that you will want to close timing with the board's trace delay accounted for, but the part delivers the full 200 MT/s throughput when the pipeline is kept full.
128K x 36 — why the width matters
The 36-bit word width is deliberate: it matches a 32-bit data bus plus four parity bits (or ECC syndrome bits) without needing external byte-lane muxing. In a typical FPGA or ASIC cache application, you connect the 36-bit data bus directly to the core logic and use the extra two bits for in-line error detection. The 128K depth at that width means 4.5 Mbits total — enough for a moderate-size lookup table, a trace buffer, or a packet descriptor memory without spilling into a second device.
Supply and temperature — 3.3 V, commercial range only
The 100-pin TQFP (14x20 mm body) is a surface-mount package that reflows with standard lead-free profiles and is inspectable under a microscope, which the rework lab techs appreciate.
That said, the broader NoBL family has higher-density siblings (9 Mbit, 250 MHz) if the system outgrows this footprint — but those are different MPNs, not drop-in upgrades.
Board-level reality — 100-TQFP, 0.5 mm pitch
The 100-TQFP package has a 0.5 mm lead pitch. The PCB layout needs a soldermask-defined pad with a 0.25 mm to 0.30 mm pad width and a via-in-pad strategy if the decoupling caps sit on the back side. The supply pins are distributed around the periphery — you will want a 0.1 µF ceramic right at each VDDQ/VSS pair and a 4.7 µF bulk cap within 5 mm of the package. The 3.3 V core supply and the I/O supply share the same rail on this variant, so no separate VDDQ regulator is needed.
