DDR II+ SRAM for high-throughput data paths
The Infineon CY7C1320KV18-250BZXI is a 18Mbit DDR II+ Synchronous SRAM organized as 512K x 36 bits, clocked at 250 MHz over a parallel interface. This is the part for network buffers, test equipment capture memory, or any pipeline that needs deterministic read-write cycles without refresh overhead.
250 MHz clock and 1.7V-1.9V core
The 250 MHz clock rate on a 512K x 36 organization means the part delivers a peak bandwidth around 2 GB/s on the data bus — the limiting factor in a real layout is the PCB trace length and termination, not the silicon. The 165-FBGA (13x15 mm) package puts the signal balls on a fine pitch — a four-layer board with buried vias is the practical minimum for routing the 36-bit data bus cleanly.
Infineon lists the CY7C1320KV18-250BZXI as Active.
