18 Mbit DDR II+ SRAM at 250 MHz – BOM-fit note
The CY7C1320KV18-250BZI is a 18 Mbit synchronous SRAM from Infineon, organized as 512K x 36 and clocked at 250 MHz. The DDR II+ interface transfers data on both clock edges, delivering a peak bandwidth of 18 Gbit/s (250 MHz x 36 bits x 2 edges) — a critical spec for high-throughput packet buffers, FIFO emulation, or cache in networking and base-station designs. The 1.7V to 1.9V supply rail places this part in the 1.8V nominal VDDQ family, which reduces I/O power by roughly 60% compared to 3.3V LVTTL interfaces. Confirm your FPGA or ASIC bank voltage matches 1.8V HSTL — the reference design on page 7 of the datasheet shows the termination network for the 36-bit data bus.
Industrial temperature and 165-FBGA footprint
The 165-FBGA (13x15 mm) package has a 1.0 mm ball pitch — a standard four-layer PCB with via-in-pad can fan out the full 36-bit bus; two-layer boards will struggle to route all signals without additional layers. The base product number CY7C1320 covers the family — the KV18 suffix denotes the 1.8V core and DDR II+ interface variant.
Last Buy – procurement window and successor path
This means Infineon has issued a final purchase order window — after the cutoff date, the part will no longer be manufactured. Any BOM that depends on this exact order code needs a lifetime-buy quantity estimate or a pin-compatible alternative identified before the window closes.