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Infineon Technologies CY7C1320JV18-250BZXI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1320JV18-250BZXI 18Mbit DDR II+ SRAM, 250 MHz

MPNCY7C1320JV18-250BZXI
Obsolete

Infineon CY7C1320JV18-250BZXI, 18Mbit DDR II+ synchronous SRAM, 250 MHz clock, 512K x 36 organization, 1.7V–1.9V supply, 165-FBGA (13x15 mm), industrial temperature -40°C to 85°C.

$33.0200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1320JV18-250BZXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency250 MHz
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTray
TechnologySRAM - Synchronous, DDR II
Memory size18Mbit
Memory formatSRAM
Case165-LBGA
Memory organization512K x 36

Product details

250 MHz DDR II+ SRAM for high-throughput buffer applications

This is a second-generation double-data-rate SRAM with a pipelined read/write architecture, used in high-bandwidth networking buffers, test equipment, and signal-processing pipelines where deterministic latency and full bus utilization are required.

Obsolete — plan your last-time buy or second-source now

This means the manufacturer has discontinued production and no further last-time-buy windows are available through the authorized channel. Any remaining stock in the independent distribution chain is finite. If you have an active BOM line using this part, the procurement decision is immediate: secure existing inventory or qualify a replacement.

Package and handling for the 165-FBGA

The 165-ball FBGA (13x15 mm) footprint is a standard fine-pitch BGA. The 1.7V–1.9V supply rail is narrow — a 1.8V ±5% regulator is the typical choice, and the PCB stack-up must keep impedance-controlled traces for the 250 MHz clock and data lines.

What the 250 MHz clock and 512K x 36 organization mean for the bus

The 250 MHz clock rate delivers a peak data rate of 18 Gbit/s on a 36-bit wide bus (double-data-rate transfers). For a networking packet buffer or a test-instrument capture memory, this keeps up with 10 GbE line rates and high-speed ADC streams without wait states. The 512K depth per word gives 2 MB of storage in a single chip, enough for moderate-size FIFO or look-up-table applications. The DDR II+ interface eliminates dead cycles between read and write turns, so back-to-back throughput is the same as the clock rate — no bus-turnaround penalty.

Frequently asked questions

Is CY7C1320JV18-250BZXI obsolete?

Yes, the CY7C1320JV18-250BZXI is listed as Obsolete by Infineon. No further production or last-time-buy windows are available through the manufacturer.

What is the replacement for CY7C1320JV18-250BZXI?

For a pin-compatible alternative within the same family, the CY7C1320JV18-250BZXCT (same die, different packaging/tray vs tape-and-reel) is a direct functional equivalent — verify the package and supply voltage match your board layout.

What is the difference between CY7C1320JV18-250BZXI and CY7C1320JV18-250BZXCT?

Both share the same 18Mbit DDR II+ SRAM die, 250 MHz clock, 512K x 36 organization, and 1.7V–1.9V supply. The BZXI suffix indicates a Tray package; the BZXCT suffix indicates Tape & Reel packaging. Electrically and functionally they are identical.