Skip to main content
Infineon Technologies CY7C1320CV18-250BZXC — Memory (DRAM / SRAM / Flash / EEPROM)

Cypress CY7C1320CV18-250BZXC 18Mbit DDR II SRAM, 250 MHz

MPNCY7C1320CV18-250BZXC
Obsolete

Cypress CY7C1320CV18-250BZXC, 18Mbit Synchronous DDR II SRAM, 512K x 36 organization, 250 MHz clock frequency, 1.7V-1.9V supply, 165-ball FBGA (13x15 mm), 0°C to 70°C operating temperature.

$42.8000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1320CV18-250BZXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency250 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, DDR II
Memory size18Mbit
Memory formatSRAM
Case165-LBGA
Memory organization512K x 36

Product details

18 Mbit DDR II SRAM at 250 MHz — what the clock rate buys you

The CY7C1320CV18-250BZXC is a Cypress 18 Mbit synchronous SRAM using DDR II architecture, organized as 512K words by 36 bits. The 250 MHz clock rate delivers double-data-rate transfers on each clock edge, giving an effective 500 MHz data rate on the 36-bit bus. The parallel memory interface keeps latency deterministic — no serialisation overhead. Supply range of 1.7V to 1.9V ties it to a 1.8V core rail, common in ASIC and FPGA designs of that era.

165-ball FBGA — footprint and rework notes

The ball pitch is tight enough that breakout vias need to be planned early in the stack-up. Surface-mount only, no through-hole option.

Production has ended; the only channel for procurement is the surplus and independent distribution market. Date-code spreads and reel condition will vary — sealed factory reels with consistent date-codes are the preferred lot condition. For a new design, a current-production DDR II or QDR SRAM in a similar density and package should be evaluated.

Frequently asked questions

What is the replacement for CY7C1320CV18-250BZXC?

No official replacement part number has been published by Cypress for the CY7C1320CV18-250BZXC. For new designs, consider evaluating current-production DDR II or QDR synchronous SRAMs from Cypress (now Infineon) or other manufacturers in the 18 Mbit density range with a similar 165-ball FBGA footprint and 1.8V supply.

What is the memory organization of CY7C1320CV18-250BZXC?

The memory is organized as 512K words by 36 bits (512K x 36), for a total density of 18 Mbit. It uses a parallel memory interface and operates as a synchronous DDR II SRAM with a 250 MHz clock.