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Infineon Technologies CY7C1318KV18-250BZXI — Memory (DRAM / SRAM / Flash / EEPROM)

Cypress CY7C1318KV18-250BZXI 18Mbit DDR II SRAM, 250 MHz

MPNCY7C1318KV18-250BZXI
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Cypress CY7C1318KV18-250BZXI, 18Mbit Synchronous DDR II SRAM, 250 MHz clock, 1M x 18 organization, 1.7V–1.9V supply, -40°C to 85°C, 165-FBGA (13x15 mm).

$29.4700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1318KV18-250BZXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency250 MHz
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTray
TechnologySRAM - Synchronous, DDR II
Memory size18Mbit
Memory formatSRAM
Case165-LBGA
Memory organization1M x 18

Product details

The Cypress CY7C1318KV18-250BZXI is a 18Mbit synchronous DDR II SRAM organized as 1M x 18, clocked at 250 MHz. It is a volatile memory for high-bandwidth buffer or cache applications where the read-write bus turnaround of a standard SRAM would leave dead cycles — the DDR II interface eliminates those gaps, so back-to-back reads and writes hit full throughput. The 1.7V to 1.9V supply rail and industrial temperature range (-40°C to 85°C) suit it for outdoor telecom line cards, factory automation controllers, and networking equipment that sits in an unheated cabinet.

Frequently asked questions

What is the closest pin-compatible alternative to CY7C1318KV18-250BZXI?

No pin-compatible alternative is listed in the official record. The CY7C1318 family includes other density and speed variants that share the same 165-FBGA footprint, but each must be verified for timing and supply voltage compatibility. Contact us with your specific requirements for a cross-reference check.