The CY7C1318CV18-200BZI is a 18Mbit synchronous DDR II SRAM organized as 1M x 18 bits, clocked at 200 MHz. It's a volatile memory part from Infineon (formerly Cypress), built for high-bandwidth parallel data paths where every clock edge moves data — think network switch buffers, base station line cards, and FPGA cache memory in telecom or industrial control backplanes. The supply rail is 1.7V to 1.9V, which aligns with 1.8V-core logic families — no extra regulator needed if your FPGA or ASIC already runs a 1.8V bank.
The 165-FBGA package (13x15 mm) demands a controlled reflow profile — the 0.80 mm ball pitch is layout-friendly for a 4-layer board, but the centre ground pad needs a thermal via array under the BGA footprint to pull heat out of the die.
Infineon lists the CY7C1318CV18-200BZI as Obsolete. No official successor part number is published on the product page — the base number CY7C1318 has no active direct drop-in listed by the manufacturer. We source and quote to order against your quantity — confirm the package (Tray, 165-FBGA) and temperature grade match your assembly before committing.
DDR II SRAM — why the double-data-rate matters
DDR II means data transfers on both rising and falling clock edges, effectively doubling throughput per pin compared to single-data-rate SRAM at the same clock frequency. At 200 MHz, the data rate is 400 MT/s per I/O — enough to feed a 16-bit or 18-bit bus without a wide parallel interface. The 1M x 18 organization gives you 18 data pins with byte-wide granularity — useful for parity or ECC schemes where an extra bit per byte is needed, or for 18-bit DSP data words.