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Infineon Technologies CY7C1314KV18-250BZXI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1314KV18-250BZXI QDR II SRAM, 18Mbit, 250 MHz

MPNCY7C1314KV18-250BZXI
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Infineon CY7C1314KV18-250BZXI QDR II synchronous SRAM, 18 Mbit (512K x 36), 250 MHz clock, 1.7-1.9 V supply, -40 to +85°C, 165-FBGA (13x15 mm), tray.

Infineon Technologies CY7C1314KV18-250BZXI datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1314KV18-250BZXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency250 MHz
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II
Memory size18Mbit
Memory formatSRAM
Case165-LBGA
Memory organization512K x 36

Product details

250 MHz QDR II SRAM — 18 Mbit in a 165-ball FBGA

The Infineon CY7C1314KV18-250BZXI is a 18 Mbit synchronous SRAM organized as 512K x 36, clocked at 250 MHz on a QDR II (Quad Data Rate) interface. The 165-ball FBGA package (13x15 mm body) places the memory array close to the processor on a multi-layer board — the 1.7 V to 1.9 V supply rail keeps I/O power low while the parallel interface delivers the bandwidth a network processor or FPGA needs for packet buffering.

Industrial temperature and supply tolerance

The 1.7 V to 1.9 V supply range gives the board designer margin for a 1.8 V rail with ±5 % regulation, enough headroom for a standard POL converter feeding the FBGA balls.

Frequently asked questions

What is the memory organization of the CY7C1314KV18-250BZXI?

It is organized as 512K words by 36 bits (512K x 36), totaling 18 Mbit of synchronous SRAM. The 36-bit wide data bus suits applications that need a full word plus parity or ECC bits in a single access cycle.