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Infineon Technologies CY7C1314CV18-250BZC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1314CV18-250BZC Infineon QDR II SRAM 18Mbit 250 MHz

MPNCY7C1314CV18-250BZC
Obsolete

Infineon CY7C1314CV18-250BZC, QDR II synchronous SRAM, 18 Mbit organized as 512K x 36, 250 MHz clock, 1.7 V–1.9 V supply, commercial temperature 0°C–70°C, 165-ball FBGA (13x15 mm).

$32.2700Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1314CV18-250BZC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency250 MHz
Memory interfaceParallel
Operating temperature0°C~70°C(TA)
PackageTray
TechnologySRAM - Synchronous, QDR II
Memory size18Mbit
Memory formatSRAM
Case165-LBGA
Memory organization512K x 36

Product details

QDR II SRAM for high-throughput buffering

The CY7C1314CV18-250BZC is a 18 Mbit QDR II synchronous SRAM organized as 512K x 36, clocked at 250 MHz. The QDR II architecture provides separate read and write data ports, eliminating bus-turnaround cycles and sustaining full-rate throughput in packet-processing and cache applications. Operating from a 1.7 V to 1.9 V core supply, it is a volatile SRAM in a 165-ball LBGA (13x15 mm FBGA) package, surface-mount.

Infineon lists this part as Obsolete. No official successor is recorded in the ledger. The 165-FBGA package (13x15 mm) and 250 MHz speed grade are the key constraints for a pin-compatible substitute. Any replacement candidate must match the QDR II interface, 1.8 V supply, and the same footprint to avoid a board respin.

Package and temperature envelope

Frequently asked questions

What is the replacement for CY7C1314CV18-250BZC?

No official successor is recorded. A pin-compatible QDR II SRAM in the same 165-FBGA footprint with 1.8 V supply and 250 MHz speed may serve as a substitute, but the exact replacement must be verified against the BOM's timing and package requirements.