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Infineon Technologies CY7C1312KV18-250BZXI — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1312KV18-250BZXI QDR II SRAM, 18 Mbit, 250 MHz

MPNCY7C1312KV18-250BZXI
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Infineon Technologies CY7C1312KV18-250BZXI QDR II synchronous SRAM, 18 Mbit (1M x 18), 250 MHz clock, 1.7V-1.9V supply, -40°C to 85°C, 165-FBGA (13x15 mm), Bulk.

$26.4400Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1312KV18-250BZXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency250 MHz
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageBulk
TechnologySRAM - Synchronous, QDR II
Memory size18Mbit
Memory formatSRAM
Case165-LBGA
Memory organization1M x 18

Product details

250 MHz QDR II SRAM — throughput and bus architecture

The CY7C1312KV18-250BZXI: The QDR II (Quad Data Rate) architecture delivers two data words per clock edge on separate read and write ports, eliminating the bus-turnaround penalty of common-I/O SRAMs. The 165-ball FBGA package (13x15 mm) requires a controlled-impedance PCB layout for the 250 MHz parallel interface.

Active lifecycle — sourcing and compliance

No pin-compatible second-source or successor is recorded in the manufacturer's cross-reference data.

Package and board integration — 165-FBGA footprint

The supply voltage tolerance (1.7V to 1.9V) requires a regulated rail with less than 100 mV ripple at the device pins.

Frequently asked questions

What is the memory organization and clock speed of CY7C1312KV18-250BZXI?

The device is organized as 1M x 18 (18 Mbit total) and operates at a 250 MHz clock frequency using a QDR II synchronous interface.