Infineon (Cypress) CY7C1312KV18-250BZXC, SRAM - Synchronous, QDR II, 18Mbit (1M x 18), 250 MHz clock, Parallel interface, 1.7V–1.9V supply, 0°C–70°C, 165-FBGA (13x15 mm), Tray.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 1.7V ~ 1.9V |
| Clock frequency | 250 MHz |
| Memory interface | Parallel |
| Operating temperature | 0°C~70°C(TA) |
| Package | Tray |
| Technology | SRAM - Synchronous, QDR II |
| Memory size | 18Mbit |
| Memory format | SRAM |
| Case | 165-LBGA |
| Memory organization | 1M x 18 |
The Infineon (Cypress) CY7C1312KV18-250BZXC is a 18 Mbit synchronous QDR II SRAM organized as 1M x 18, clocked at 250 MHz. This part is built for applications that demand back-to-back read and write transactions without bus-turnaround dead cycles — the QDR II architecture delivers separate read and write ports, effectively doubling throughput versus a traditional shared-bus SRAM at the same clock rate.
Design engineers need full specifications to validate fit and timing.
Sourcing buyers require pricing for budget and BOM costing.
Buyers need immediate availability to avoid production delays.
Lead time affects project scheduling and procurement planning.
Maintenance techs and brokers need drop-in replacements for failed units or supply shortages.
Lifecycle status determines long-term support and alternative sourcing strategy.