QDR II synchronous SRAM at 250 MHz — what the clock rate buys you
The Infineon CY7C1312KV18-250BZCT is a 18 Mbit QDR II synchronous SRAM organized as 1M x 18, clocked at 250 MHz. QDR (Quad Data Rate) architecture delivers two data words per clock edge on separate read and write ports, effectively quadrupling the throughput of a conventional synchronous SRAM at the same bus speed. This part is designed for high-bandwidth, low-latency applications such as network switch buffers, line-card packet memory, and telecom frame processors where back-to-back read/write transactions must sustain full rate without bus-turnaround dead cycles.
Most designs will run it at 1.8 V nominal, but the 1.7 V floor allows operation during supply droop or with a slightly lower regulator setpoint. The 1.9 V ceiling is tight — a 1.8 V rail with 5% tolerance sits at 1.89 V, so a 3% or tighter regulator is recommended to stay clear of the absolute maximum. Board-level decoupling should follow the QDR II layout guide: one 0.1 µF ceramic per supply pin pair, plus bulk capacitance at the board edge.
165-ball FBGA — footprint and handling
The package is 165-LBGA (13x15 mm) on tape and reel.
For current production designs, this part is a low-risk BOM line with stable supply through authorized distribution. No imminent obsolescence risk.