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Infineon Technologies CY7C1292DV18-167BZC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1292DV18-167BZC QDR II SRAM, 9 Mbit, 167 MHz, Obsolete

MPNCY7C1292DV18-167BZC
Obsolete

Infineon (Cypress) CY7C1292DV18-167BZC, QDR II synchronous SRAM, 9 Mbit (512K x 18), 167 MHz clock, parallel interface, 1.7V–1.9V supply, 0°C–70°C, 165-ball FBGA (13x15 mm), Tray.

$23.5600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1292DV18-167BZC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency167 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II
Memory size9Mbit
Memory formatSRAM
Case165-LBGA
Memory organization512K x 18

Product details

QDR II SRAM at 167 MHz — what it delivers

The CY7C1292DV18-167BZC is a 9 Mbit synchronous QDR II SRAM from Infineon (formerly Cypress), organized as 512K x 18. The 167 MHz clock rate and QDR II architecture — separate read and write ports, each clocking on both edges — deliver back-to-back read-write throughput without dead cycles, a key advantage for high-bandwidth buffers in networking, telecom, and test equipment where every bus turnaround matters.

Package and supply — design-in checklist

Housed in a 165-ball FBGA (13x15 mm body), the part uses a standard QDR II footprint common across density options.

Marked Obsolete by the manufacturer. For production BOMs still specifying this exact order code, the only channel is surplus inventory or broker-sourced material — date-code and authenticity verification become critical.

Frequently asked questions

What is the memory density and organization of this SRAM?

9 Mbit total, organized as 512K words by 18 bits. The 18-bit width supports parity or ECC schemes in data-path applications.