Synchronous DDR II+ SRAM at 400 MHz — what the clock rate means for throughput
The CY7C1270KV18-400BZC is a 36Mbit synchronous SRAM organized as 1M x 36, clocked at 400 MHz with a parallel interface. At this clock rate, each read/write cycle completes in 2.5 ns — the DDR II+ architecture transfers data on both clock edges, so the effective data rate is 800 MT/s per I/O pin. For a 36-bit bus, that is 3.6 GB/s peak bandwidth into the SRAM array. The 1.7 V to 1.9 V core supply matches the low-voltage rail on modern ASICs and FPGAs.
Package and board integration — 165-FBGA footprint
The package is supplied in tray format — the bare die and substrate are moisture-sensitive; bake before reflow if the floor-life has been exceeded per J-STD-020. The 1M x 36 organization means the address bus is 20 bits wide (A0–A19) plus the 36-bit data bus. The 400 MHz clock input requires a clean 1.7–1.9 V supply with local decoupling within 5 mm of the VDD balls to keep the supply impedance below 100 mΩ at the switching frequency.
Obsolete — sourcing reality for the CY7C1270KV18-400BZC
Infineon lists this part as Obsolete. No official successor or pin-compatible replacement is recorded from the original manufacturer. The DDR II+ interface and 400 MHz clock rate are specific to this generation of synchronous SRAM — a direct drop-in is not available from the factory. For existing BOM lines, the part is sourced through independent distribution channels. Quantities are lot-specific and confirmed at RFQ.