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Infineon Technologies CY7C1263KV18-400BZXI — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1263KV18-400BZXI Infineon 36Mbit QDR II+ SRAM, 400 MHz

MPNCY7C1263KV18-400BZXI
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Infineon CY7C1263KV18-400BZXI QDR II+ synchronous SRAM, 36 Mbit (2M x 18), 400 MHz clock, 1.7-1.9 V supply, -40 to +85 °C, 165-ball FBGA (13x15 mm), tray.

$50.2655Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1263KV18-400BZXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency400 MHz
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II+
Memory size36Mbit
Memory formatSRAM
Case165-LBGA
Memory organization2M x 18

Product details

400 MHz QDR II+ — what the clock rate means for the bus

The CY7C1263KV18-400BZXI is a 36 Mbit QDR II+ synchronous SRAM from Infineon, organized 2M x 18. The 400 MHz clock rate means each port (read and write) transfers data on both edges, giving an effective 800 MT/s per port — the limiting factor in a high-throughput buffer or look-up table is the FPGA or ASIC interface, not the SRAM.

Package and supply — board-fit realities

The core supply is 1.7 V to 1.9 V, a single rail that needs ±5 % regulation; a 1.8 V rail with 50 mV ripple is the typical design target. The parallel memory interface means the bus traces must be length-matched to the controller — a layout constraint, not a parametric one.