It clocks at 400 MHz, which means the memory delivers two data transfers per clock cycle on both read and write operations — effectively doubling the throughput compared to a single-data-rate SRAM at the same bus speed.
The 400 MHz clock rate on this DDR II+ SRAM yields a peak data rate of 800 million transfers per second on the 18-bit data bus. For a design that needs back-to-back read-write turns without dead cycles — think packet buffer lookups or real-time waveform capture — that throughput keeps the pipeline fed. The DDR II+ protocol eliminates the turnaround penalty that standard NoBL or QDR architectures sometimes impose on alternating read-write sequences. If your FPGA or ASIC memory controller is already tuned for DDR II+ timing, this part drops in with minimal PLL reconfiguration.
Housed in a 165-ball FBGA (13x15 mm body), the CY7C1248KV18-400BZC uses a fine-pitch BGA that demands controlled impedance routing on the data and address lines. Supply decoupling should follow the layout recommendations in the datasheet: one 0.1 µF ceramic per supply pin pair, placed as close to the ball as the via pattern allows.
That suits indoor rack-mount equipment with forced air — server farms, lab instrumentation, central-office telecom — but it is not qualified for outdoor base stations, engine compartments, or unventilated enclosures where ambient can push past 70°C. If your system sees -40°C or +85°C ambient, you need the industrial-temperature variant in this family.