Infineon CY7C1245KV18-400BZC, 36Mbit synchronous QDR II+ SRAM, 1M x 36 organization, 400 MHz clock, 1.7V–1.9V supply, 165-FBGA, commercial temperature 0°C to 70°C.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 1.7V ~ 1.9V |
| Clock frequency | 400 MHz |
| Memory interface | Parallel |
| Operating temperature | 0°C ~ 70°C (TA) |
| Package | Tray |
| Technology | SRAM - Synchronous, QDR II+ |
| Memory size | 36Mbit |
| Memory format | SRAM |
| Case | 165-LBGA |
| Memory organization | 1M x 36 |
The Infineon CY7C1245KV18-400BZC is a 36Mbit synchronous SRAM using the QDR II+ architecture, organized as 1M x 36 bits and clocked at 400 MHz.
The core supply runs at 1.7V to 1.9V. The 165-FBGA (13x15 mm) footprint requires careful PCB layout for the 400 MHz clock and data strobes.
Not suitable for outdoor cabinets, factory floors, or engine bays without active climate control.
No official direct replacement is listed. The CY7C1265XV18-633BZXC is a higher-speed sibling (633 MHz) in the same QDR II+ family with the same 1M x 36 organization and supply voltage, but it requires a board-level timing review before substitution.
QDR II+ is the second-generation quad-data-rate architecture, offering higher clock frequencies (up to 633 MHz and beyond) and a 1.7V to 1.9V supply range compared to the original QDR's 2.5V node. It maintains the independent read and write port structure for zero bus-turnaround overhead.
It is a synchronous QDR II+ SRAM — volatile memory with a parallel interface, organized as 1M x 36 bits, clocked at 400 MHz.