The Infineon CY7C1170KV18-550BZC is a 18 Mbit synchronous SRAM organised as 512K x 36, using DDR II+ (Double Data Rate II+) architecture. It runs at a 550 MHz clock, delivering back-to-back read/write throughput without dead cycles on a 36-bit parallel bus. The 1.7 V to 1.9 V supply and 165-ball FBGA package (13x15 mm) target high-bandwidth networking, telecom line cards, and DSP memory subsystems where wide-word access and low-latency matter.
At 550 MHz the DDR II+ interface transfers data on both clock edges. The 512K x 36 organisation moves 36 bits in parallel per access.
Package and temperature — board-level constraints
Storage temperature exceeds the operating range, but the part is not rated for condensation or extended thermal cycling outside the commercial window.
