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Infineon Technologies CY7C1163KV18-550BZC — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1163KV18-550BZC QDR II+ SRAM, 18Mbit, 550 MHz

MPNCY7C1163KV18-550BZC
Active

Infineon Technologies QDR II+ synchronous SRAM, CY7C1163KV18-550BZC, 18Mbit (1M x 18), 550 MHz clock, 1.7-1.9V supply, 165-FBGA, tray.

$51.7588Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1163KV18-550BZC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency550 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II+
Memory size18Mbit
Memory formatSRAM
Case165-LBGA
Memory organization1M x 18

Product details

QDR II+ SRAM at 550 MHz — what the clock rate means for the memory bus

The CY7C1163KV18-550BZC is a 18 Mbit QDR II+ synchronous SRAM from Infineon, organized as 1M x 18. The 550 MHz clock rate means the memory delivers a read and a write data transfer on every clock edge — effectively two transactions per cycle — so the peak data rate into the controller is 1.1 G transfers per second on the 18-bit bus.

Package and board-fit for the layout engineer

The supply operates from 1.7 V to 1.9 V, so the core rail must be regulated to within that window — a 1.8 V nominal rail with ±5 % tolerance fits cleanly.

Active lifecycle — sourcing posture for the BOM

Infineon lists this part as Active (current production).

Frequently asked questions

What is the memory technology and interface of CY7C1163KV18-550BZC?

It is a synchronous SRAM using the QDR II+ architecture with a parallel memory interface. The 18 Mbit density is organized as 1M words by 18 bits.

What package does CY7C1163KV18-550BZC use?

The supplier device package is 165-FBGA.