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Infineon Technologies CY7C109D-10VXI — Memory (DRAM / SRAM / Flash / EEPROM)

Cypress CY7C109D-10VXI 1Mbit Async SRAM, 10 ns, 32-SOJ

MPNCY7C109D-10VXI
Active

Cypress CY7C109D-10VXI asynchronous SRAM, 1Mbit (128K x 8), 10 ns access time, parallel interface, 4.5V~5.5V supply, -40°C to 85°C, 32-SOJ package, Tube.

$4.3300Ref. price · indicative, final on quote
Infineon Technologies CY7C109D-10VXI datasheet (PDF)
Packaging32-BSOJ (0.400", 10.16mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C109D-10VXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage4.5V ~ 5.5V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTube
TechnologySRAM - Asynchronous
Access time10 ns
Memory size1Mbit
Memory formatSRAM
Case32-BSOJ (0.400\", 10.16mm Width)
Memory organization128K x 8
Write cycle time - word, page10ns

Product details

The CY7C109D-10VXI: This rating is the one that determines whether the part can keep up with a fast processor or DSP without wait states. For a system with a 100 MHz bus clock (10 ns period), this part fits with zero margin; at 66 MHz (15 ns period) there is comfortable headroom.

Industrial temperature grade

No forced-air cooling is required at the upper end as long as the junction stays within the package limits.

Package and footprint — 32-SOJ

Package is 32-BSOJ, 0.400-inch body width, delivered in Tube.

Frequently asked questions

What is the closest functional second-source for CY7C109D-10VXI?

The CY7C109D-10ZXIT is the same Cypress die in a tape-and-reel package, electrically identical. For a 3.0 V supply alternative, the CY7C1018DV33-10VXI offers the same 128K x 8 organization and 10 ns access time but at 3.0 V. No pin-compatible second source from another manufacturer is listed in the official cross-reference.