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Infineon Technologies CY7C109BN-12ZXC — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C109BN-12ZXC 1Mbit Async SRAM, 12 ns, 32-TSOP I

MPNCY7C109BN-12ZXC
Obsolete

Infineon CY7C109BN-12ZXC, 1Mbit (128K x 8) Asynchronous SRAM, 12 ns access time, Parallel interface, 4.5V to 5.5V supply, 32-TSOP I package, 0°C to 70°C commercial temperature.

Infineon Technologies CY7C109BN-12ZXC datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C109BN-12ZXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage4.5V ~ 5.5V
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Asynchronous
Access time12 ns
Memory size1Mbit
Memory formatSRAM
Case32-TFSOP (0.724\", 18.40mm Width)
Memory organization128K x 8
Write cycle time - word, page12ns

Product details

12 ns asynchronous SRAM for legacy 5V bus systems

The Infineon CY7C109BN-12ZXC is a 1Mbit asynchronous SRAM organized as 128K x 8 bits, with a 12 ns access time. This is a volatile memory — data is retained only while power is applied.

It is not specified for industrial or automotive temperature extremes.

32-TSOP I surface-mount footprint

Supplied in a 32-TFSOP package (0.724" body width, 18.40mm wide) with a 32-TSOP I supplier device package designation. The surface-mount form factor suits automated assembly lines. The shipping medium is Tray, which is typical for SRAMs of this density and package style — not a selection parameter, but relevant for feeder setup and moisture-sensitivity handling.

Frequently asked questions

What is the replacement for CY7C109BN-12ZXC?

For new designs, evaluate Infineon's current asynchronous SRAM portfolio for a form-fit-function alternative, but verify pin compatibility and timing against your specific bus interface.