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Infineon Technologies CY7C109B-15VXC — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C109B-15VXC SRAM, 128K x 8, 15 ns, SOJ-32

MPNCY7C109B-15VXC
Obsolete

Infineon Technologies CY7C109B-15VXC asynchronous SRAM, 1 Mbit (128K x 8), 15 ns access time, parallel interface, 4.5-5.5 V supply, 0 to 70 °C, SOJ-32 package, Tube.

Infineon Technologies CY7C109B-15VXC datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C109B-15VXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage4.5V ~ 5.5V
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTube
TechnologySRAM - Asynchronous
Access time15 ns
Memory size1Mbit
Memory formatSRAM
Case32-BSOJ (0.400\", 10.16mm Width)
Memory organization128K x 8
Write cycle time - word, page15ns

Product details

128K x 8 asynchronous SRAM, 15 ns access

The CY7C109B-15VXC: Organized as 128K words by 8 bits (1 Mbit total), accessed through a parallel interface with a 15 ns access time — the same 15 ns figure applies to the write cycle time, so read and write operations run at the same bus speed.

SOJ-32 surface-mount footprint

Housed in a 32-lead SOJ (Small Outline J-lead) package, 0.400-inch body width — the J-bend leads save board area compared to a SOP with gull-wing leads, but the solder joint is harder to inspect visually. Rated for the commercial temperature range of 0 °C to 70 °C, suitable for indoor equipment, test gear, and office-environment hardware.

Frequently asked questions

What is the memory organization and access time of CY7C109B-15VXC?

128K words x 8 bits (1 Mbit total) with a 15 ns access time. The write cycle time is also 15 ns, so the part runs at the same speed for both read and write operations.