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Infineon Technologies CY7C1081DV33-12BAXI — Memory (DRAM / SRAM / Flash / EEPROM)

Cypress CY7C1081DV33-12BAXI 64Mbit Async SRAM, 12 ns

MPNCY7C1081DV33-12BAXI
Obsolete

Cypress CY7C1081DV33-12BAXI, 64Mbit asynchronous SRAM, 4M x 16 organization, 12 ns access time, 3V-3.6V supply, -40°C to 85°C, 48-LFBGA (8x9.5 mm), Tray.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1081DV33-12BAXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage3V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Asynchronous
Access time12 ns
Memory size64Mbit
Memory formatSRAM
Case48-LFBGA
Memory organization4M x 16
Write cycle time - word, page12ns

Product details

64Mbit asynchronous SRAM in a 48-ball FBGA

The Cypress CY7C1081DV33-12BAXI is a 64Mbit asynchronous SRAM organized as 4M x 16 bits, with a 12 ns access time that sets the bus timing margin for the memory interface.

The 12 ns access time is the headline rating that determines whether this SRAM can keep up with the system bus without wait states. In a typical 66 MHz or 100 MHz bus environment, a 12 ns random access allows the memory controller to meet setup-and-hold windows with a few nanoseconds of margin, provided the board trace lengths are kept under about 2 inches.

Frequently asked questions

Where can I buy CY7C1081DV33-12BAXI and get a price?

Submit an RFQ through this listing to receive a firm price and lead-time response.

What is the difference between CY7C1081DV33-12BAXI and CY7C1081DV33-12BAI?

The difference is in the package suffix. The CY7C1081DV33-12BAXI uses a 48-LFBGA (8x9.5 mm) package, while the CY7C1081DV33-12BAI uses a different package variant. The 'X' in the suffix typically denotes a lead-free / RoHS-compliant finish. Both share the same 64Mbit density, 12 ns access time, and 3V-3.6V supply range.