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Infineon Technologies CY7C1069GN30-10ZSXI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1069GN30-10ZSXI 16Mbit Async SRAM, 10 ns

MPNCY7C1069GN30-10ZSXI
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Infineon CY7C1069GN30-10ZSXI, 16Mbit Asynchronous SRAM, 2M x 8 organization, 10 ns access time, 2.2V-3.6V supply, -40°C to 85°C, 54-TSOP II, Tray.

$40.0872Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1069GN30-10ZSXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage2.2V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Asynchronous
Access time10 ns
Memory size16Mbit
Memory formatSRAM
Case54-TSOP (0.400\", 10.16mm Width)
Memory organization2M x 8
Write cycle time - word, page10ns

Product details

That margin matters when the memory is on a shared parallel bus with other peripherals — the 10 ns rating keeps the timing closure straightforward without needing a faster (and pricier) synchronous part.

The wide supply range answers the common question: this part operates at 3.3 V and also down to 2.2 V, so it fits designs that run a 2.5 V core memory bus or a legacy 3.3 V I/O bank without a level shifter.

The 54-TSOP II package with surface-mount footprint keeps the board assembly compatible with standard reflow profiles.

Procurement can qualify it for new designs without an obsolescence risk flag.

Frequently asked questions

Does CY7C1069GN30-10ZSXI operate at 3.3V or only 2.5V?

It operates across a 2.2V to 3.6V supply range, so it works on both 2.5V and 3.3V nominal rails without a level shifter.