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Infineon Technologies CY7C1069GE30-10ZSXI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1069GE30-10ZSXI 16Mbit Async SRAM, 10 ns

MPNCY7C1069GE30-10ZSXI
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Infineon CY7C1069GE30-10ZSXI, asynchronous SRAM, 16Mbit (2M x 8), 10 ns access time, parallel interface, 2.2 V to 3.6 V supply, -40°C to 85°C, 54-TSOP II, Tray.

$27.5000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1069GE30-10ZSXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage2.2V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Asynchronous
Access time10 ns
Memory size16Mbit
Memory formatSRAM
Case54-TSOP (0.400\", 10.16mm Width)
Memory organization2M x 8
Write cycle time - word, page10ns

Product details

16 Mbit asynchronous SRAM with a 10 ns window

The parallel interface and 10 ns write cycle time mean it can keep up with a fast controller or FPGA without inserting wait states, provided the address-to-data setup budget is tight.

10 ns access time — bus margin, not just a number

For a 100 MHz bus (10 ns cycle), that leaves zero margin for address decoding and board trace delay — you need a slower clock or a pipelined controller. At 66 MHz (15 ns cycle), the 10 ns access gives a 5 ns window for the glue logic and PCB flight time, which is workable with careful layout.

The 2.2 V minimum supply also helps in battery-backed or low-voltage-drop designs where the rail sags under load.

Frequently asked questions

Is CY7C1069GE30-10ZSXI compatible with 3.3 V systems?

Yes. The inputs and outputs are 3.3 V tolerant, and the 10 ns access time is specified across the full voltage range.