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Infineon Technologies CY7C1069G30-10BVXIT — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1069G30-10BVXIT Infineon 16 Mbit Async SRAM 10 ns

MPNCY7C1069G30-10BVXIT
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Infineon CY7C1069G30-10BVXIT, 16 Mbit asynchronous SRAM, 10 ns access time, 2.2 V–3.6 V supply, 2M x 8 parallel organization, 48-VFBGA (6×8 mm), -40 °C to 85 °C, Tape & Reel.

$38.5000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1069G30-10BVXIT specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage2.2V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTape & Reel (TR)
TechnologySRAM - Asynchronous
Access time10 ns
Memory size16Mbit
Memory formatSRAM
Case48-VFBGA
Memory organization2M x 8
Write cycle time - word, page10ns

Product details

16 Mbit asynchronous SRAM for byte-wide buses

The parallel interface and byte-wide organization make it a direct fit for MCU and FPGA designs that need fast scratchpad memory without the complexity of synchronous timing.

10 ns access time and industrial temperature grade

The 10 ns access time and 10 ns write cycle time give the memory controller a tight but manageable timing window for zero-wait-state operation at typical bus speeds.

Active production and supply posture

48-VFBGA footprint and layout considerations

The 48-VFBGA (6x8 mm) package with a 0.75 mm typical ball pitch demands at least a 4-layer PCB to fan out the inner rows without via-in-pad, and decoupling capacitors within 2 mm of the supply balls.

Frequently asked questions

What is the access time of CY7C1069G30-10BVXIT?

The access time is 10 ns, with a matching 10 ns write cycle time. This allows zero-wait-state operation with most 100 MHz-class bus controllers.