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Infineon Technologies CY7C1069G30-10BVXI — Memory (DRAM / SRAM / Flash / EEPROM)

Cypress CY7C1069G30-10BVXI 16Mbit Async SRAM, 10 ns

MPNCY7C1069G30-10BVXI
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Cypress Semiconductor CY7C1069G30-10BVXI, 16Mbit asynchronous SRAM, 10 ns access time, 2.2V–3.6V supply, parallel interface, -40°C to 85°C, 48-VFBGA (6x8 mm) tray.

$38.9100Ref. price · indicative, final on quote
Packaging48-VFBGA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1069G30-10BVXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage2.2V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Asynchronous
Access time10 ns
Memory size16Mbit
Memory formatSRAM
Case48-VFBGA
Memory organization2M x 8
Write cycle time - word, page10ns

Product details

Package and footprint — 48-VFBGA (6x8 mm)

The 48-VFBGA (6x8 mm) package is a fine-pitch BGA that saves board area compared to a 44-pin TSOP, but it requires a controlled impedance layout and at least four-layer PCB for the signal escape.

Frequently asked questions

What is the access time of CY7C1069G30-10BVXI?

The access time is 10 ns, which is the cycle time for both read and write operations (word and page write cycle time is also 10 ns).

What are alternatives to CY7C1069G30-10BVXI?

The closest functional alternative is the CY7C1061G30-10BVXI, which is also a 16Mbit asynchronous SRAM with 10 ns access time and the same 48-VFBGA package, but organized as 1M x 16 instead of 2M x 8. The wider data bus changes the pinout and board layout, so verify the memory controller's bus width before substituting.