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Infineon Technologies CY7C1061GN30-10ZSXI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1061GN30-10ZSXI 16Mbit Async SRAM, 10 ns

MPNCY7C1061GN30-10ZSXI
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Infineon CY7C1061GN30-10ZSXI, 16Mbit (1M x 16) asynchronous SRAM, 10 ns access time, parallel interface, 2.2V–3.6V supply, -40°C to 85°C, 54-TSOP II package, tube.

$53.7600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1061GN30-10ZSXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage2.2V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTube
TechnologySRAM - Asynchronous
Access time10 ns
Memory size16Mbit
Memory formatSRAM
Case54-TSOP (0.400\", 10.16mm Width)
Memory organization1M x 16
Write cycle time - word, page10ns

Product details

10 ns asynchronous SRAM for speed-critical data buffers

The CY7C1061GN30-10ZSXI: It operates from a 2.2V to 3.6V supply, so it can sit on a 3.3V or 2.5V rail without an intermediate regulator — useful in mixed-voltage designs where the core logic runs at 3.3V and the I/O bank at 2.5V.

Supply tolerance and bus design

The 2.2V minimum supply means the SRAM holds data down to near the brownout threshold of a 2.5V rail, reducing the need for a separate supervisor reset on the memory alone. Write cycle time matches the access time at 10 ns, so back-to-back reads and writes run at the same bus rate without dead cycles — important for FIFO-style data buffers in imaging or networking gear.

That removes the single-source risk for production builds that need a steady supply of 16Mbit async SRAM.

Frequently asked questions

Is CY7C1061GN30-10ZSXI compatible with 3.3V supply?

Yes, the supply range is 2.2V to 3.6V, so it operates directly on a 3.3V rail.