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Infineon Technologies CY7C1061GN30-10BVXI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1061GN30-10BVXI SRAM, 16Mbit, 10 ns, 48-VFBGA

MPNCY7C1061GN30-10BVXI
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Infineon Technologies CY7C1061GN30-10BVXI asynchronous SRAM, 16Mbit (1M x 16), 10 ns access time, 2.2V-3.6V supply, -40°C to 85°C, 48-VFBGA (6x8 mm), Tray.

$41.9625Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1061GN30-10BVXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage2.2V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Asynchronous
Access time10 ns
Memory size16Mbit
Memory formatSRAM
Case48-VFBGA
Memory organization1M x 16
Write cycle time - word, page10ns

Product details

16Mbit asynchronous SRAM — 10 ns access, industrial temp

The Infineon CY7C1061GN30-10BVXI is a 16Mbit asynchronous SRAM organized as 1M words by 16 bits, with a 10 ns access time and matching 10 ns write cycle time (word, page).

Package and board-fit — 48-VFBGA, 6x8 mm

Housed in a 48-ball VFBGA (6x8 mm footprint), the package keeps the board footprint compact — the 0.75 mm ball pitch typically routes out on two signal layers with a 0.2 mm via-in-pad or dogbone breakout. Surface-mount assembly; the Tray carrier aligns with standard pick-and-place feeders. The package is lead-free and RoHS-compliant per Infineon's standard material declaration.

Frequently asked questions

What is the memory organization of CY7C1061GN30-10BVXI?

The CY7C1061GN30-10BVXI is organized as 1M words by 16 bits (1M x 16), giving a total density of 16 Mbit.

What is the access time and write cycle time for this SRAM?

Both the access time and the write cycle time (word, page) are specified at 10 ns.