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Infineon Technologies CY7C1061GN30-10BVJXIT — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1061GN30-10BVJXIT 16Mbit Async SRAM, 10 ns

MPNCY7C1061GN30-10BVJXIT
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Infineon CY7C1061GN30-10BVJXIT, 16Mbit Asynchronous SRAM, 1M x 16, 10 ns access time, Parallel interface, 2.2V ~ 3.6V supply, -40°C ~ 85°C, 48-VFBGA (6x8 mm), Tape & Reel.

$24.3375Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1061GN30-10BVJXIT specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage2.2V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTape & Reel (TR)
TechnologySRAM - Asynchronous
Access time10 ns
Memory size16Mbit
Memory formatSRAM
Case48-VFBGA
Memory organization1M x 16
Write cycle time - word, page10ns

Product details

10 ns access time — bus timing margin for high-throughput designs

The 48-ball VFBGA (6x8 mm) footprint saves board area compared to TSOP or SOJ packages, though the fine pitch demands careful decoupling placement and via stitching under the BGA.

The 10 ns write cycle time (word, page) matches the read access, so back-to-back read-write sequences run at full speed without dead cycles.

Frequently asked questions

What is the closest pin-compatible alternative to CY7C1061GN30-10BVJXIT?

Within the CY7C1061 family, density and speed variants share the same 48-VFBGA footprint and pinout — for example, a 10 ns part with a different temperature grade or a 12 ns speed bin. Check the base product number CY7C1061 for compatible options; the datasheet's ordering information table lists the full matrix.