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Infineon Technologies CY7C1061GN30-10BV1XI — Memory (DRAM / SRAM / Flash / EEPROM)

Cypress CY7C1061GN30-10BV1XI 16Mbit Async SRAM, 10 ns

MPNCY7C1061GN30-10BV1XI
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Infineon (Cypress) CY7C1061GN30-10BV1XI, 16Mbit asynchronous SRAM, 10 ns access time, 1M x 16 organization, parallel interface, 2.2V to 3.6V supply, -40°C to 85°C, 48-VFBGA (6x8 mm).

$27.3000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1061GN30-10BV1XI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage2.2V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Asynchronous
Access time10 ns
Memory size16Mbit
Memory formatSRAM
Case48-VFBGA
Memory organization1M x 16
Write cycle time - word, page10ns

Product details

It is designed for high-speed cache, packet buffers, and real-time control storage where deterministic read/write timing matters and the bus can tolerate the asynchronous handshake. At 100 MHz system clock (10 ns period), the address-to-data valid window leaves almost no slack if the controller's tCO and board trace delays eat into it — a 66 MHz or slower bus is a safer match without adding wait states.

Industrial temperature grade and VFBGA package — deployment context

The package is surface-mount only; no socket option exists for this form factor.

Frequently asked questions

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Is CY7C1061GN30-10BV1XI obsolete?

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What is the datasheet for CY7C1061GN30-10BV1XI?

Datasheet provides critical electrical and mechanical specs for design validation.