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Infineon Technologies CY7C1061GN18-15ZSXIT — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1061GN18-15ZSXIT 16Mbit Async SRAM, 15 ns

MPNCY7C1061GN18-15ZSXIT
Active

Infineon CY7C1061GN18-15ZSXIT, asynchronous SRAM, 16Mbit (1M x 16), 15 ns access time, parallel interface, 1.65 V to 2.2 V supply, -40°C to 85°C, 54-TSOP II, Tape & Reel.

$27.3000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1061GN18-15ZSXIT specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.65V ~ 2.2V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTape & Reel (TR)
TechnologySRAM - Asynchronous
Access time15 ns
Memory size16Mbit
Memory formatSRAM
Case54-TSOP (0.400\", 10.16mm Width)
Memory organization1M x 16
Write cycle time - word, page15ns

Product details

This is a volatile memory part — data is retained only while power is applied — intended for high-speed buffer, cache, or working memory in embedded systems where deterministic access latency matters more than density. The 1.65 V to 2.2 V supply range is a low-voltage domain; if the rest of the board runs at 3.3 V or 1.8 V nominal, check whether level translation is needed on the address/data bus.

Industrial temperature and supply — fit for outdoor and factory-floor gear

The supply voltage tolerance from 1.65 V to 2.2 V covers the common 1.8 V rail with margin on both sides, but it will not work on a 3.3 V or 2.5 V rail without a regulator or level shifter. The 54-TSOP II package (0.400" body width, 10.16 mm) is a standard JEDEC footprint for asynchronous SRAMs of this density, so board layout reuse across density upgrades is straightforward.

Infineon lists the CY7C1061GN18-15ZSXIT as Active.

Frequently asked questions

What is the access time of CY7C1061GN18-15ZSXIT?

This determines the maximum bus speed the memory can support without wait states.