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Infineon Technologies CY7C1061GE30-10BVJXIT — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1061GE30-10BVJXIT Async SRAM, 16 Mbit, 10 ns

MPNCY7C1061GE30-10BVJXIT
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Infineon CY7C1061GE30-10BVJXIT asynchronous SRAM, 16 Mbit (1M x 16), 10 ns access time, 2.2–3.6 V supply, 48-VFBGA (6×8 mm), industrial temp -40 to 85°C, Tape & Reel.

$27.5000Ref. price · indicative, final on quote
Infineon Technologies CY7C1061GE30-10BVJXIT datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1061GE30-10BVJXIT specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage2.2V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTape & Reel (TR)
TechnologySRAM - Asynchronous
Access time10 ns
Memory size16Mbit
Memory formatSRAM
Case48-VFBGA
Memory organization1M x 16
Write cycle time - word, page10ns

Product details

16 Mbit async SRAM with 10 ns access in a 48-VFBGA

The CY7C1061GE30-10BVJXIT: Packaged in a 48-VFBGA (6x8 mm), the part is surface-mount and intended for parallel-bus applications where deterministic read/write latency matters — no refresh overhead, no clock dependency.

For a system architect, this speed grade eliminates the need for wait states in most microcontroller and FPGA interfaces running at moderate clock rates.

Industrial temperature and footprint

The 48-VFBGA (6×8 mm) package saves board area but requires careful PCB layout for the fine-pitch balls.

Frequently asked questions

What is the access time of CY7C1061GE30-10BVJXIT?

The access time is 10 ns for both read and write cycles, which determines the bus timing margin for the memory interface.