Industrial temperature grade and supply flexibility
The CY7C1061GE30-10BVJXI: The 10 ns access time and 10 ns write cycle time (word/page) mean the memory keeps pace with a 100 MHz bus without wait states in most microcontroller and ASIC designs.
CY7C1061GE30-10BVJXI Infineon SRAM, 16Mbit, 10 ns, 48-VFBGA
MPNCY7C1061GE30-10BVJXI
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Infineon Technologies CY7C1061GE30-10BVJXI asynchronous SRAM, 16 Mbit (1M x 16), 10 ns access time, parallel interface, 2.2-3.6 V supply, -40 to 85°C, 48-VFBGA (6x8 mm), tray.
$28.7082Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026
Specifications
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 2.2V ~ 3.6V |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 85°C (TA) |
| Package | Tray |
| Technology | SRAM - Asynchronous |
| Access time | 10 ns |
| Memory size | 16Mbit |
| Memory format | SRAM |
| Case | 48-VFBGA |
| Memory organization | 1M x 16 |
| Write cycle time - word, page | 10ns |
Product details
Frequently asked questions
Who supplies CY7C1061GE30-10BVJXI and how is it quoted for volume purchases?
This part is sourced through independent distribution.