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Infineon Technologies CY7C1061GE18-15ZXIT — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1061GE18-15ZXIT 16Mbit Async SRAM, 15 ns

MPNCY7C1061GE18-15ZXIT
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Infineon CY7C1061GE18-15ZXIT, 16Mbit asynchronous SRAM, 1M x 16 organization, 15 ns access time, 1.65V-2.2V supply, -40°C to 85°C, 48-TSOP I, Tape & Reel.

$27.5000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1061GE18-15ZXIT specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.65V ~ 2.2V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTape & Reel (TR)
TechnologySRAM - Asynchronous
Access time15 ns
Memory size16Mbit
Memory formatSRAM
Case48-TFSOP (0.724\", 18.40mm Width)
Memory organization1M x 16
Write cycle time - word, page15ns

Product details

16Mbit asynchronous SRAM for 1.8V core logic buses

This part is typically used as a fast scratchpad or data buffer in networking equipment, base stations, industrial controllers, and test instrumentation where a parallel memory interface and low-voltage 1.8V logic are standard.

15 ns access time — timing margin on a 1.8V bus

At 1.8V, bus timing is tighter than at 3.3V; a 15 ns part gives comfortable margin for most 50-66 MHz ASIC or FPGA interfaces that expect a 20 ns or faster memory cycle.

The 1.65V to 2.2V supply covers the 1.8V nominal rail with headroom for ripple and drop — no external level translator needed when the host also runs at 1.8V. The 48-TSOP I footprint is a standard asynchronous SRAM pinout, so layout reuse across density upgrades is straightforward.