Infineon CY7C1061GE-10ZSXI, 16Mbit asynchronous SRAM, 1M x 16 organization, 10 ns access time, Parallel interface, 4.5V ~ 5.5V supply, -40°C ~ 85°C, 54-TSOP II (0.400", 10.16mm Width), Surface Mount, Tray.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 4.5V ~ 5.5V |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 85°C (TA) |
| Package | Tray |
| Technology | SRAM - Asynchronous |
| Access time | 10 ns |
| Memory size | 16Mbit |
| Memory format | SRAM |
| Case | 54-TSOP (0.400\", 10.16mm Width) |
| Memory organization | 1M x 16 |
| Write cycle time - word, page | 10ns |
The part ships in a Tray, which is typical for production-pick quantities; reel availability may vary by distributor.
Infineon lists the CY7C1061GE-10ZSXI as Active. The base product number CY7C1061 covers multiple speed and temperature variants; the -10ZSXI suffix picks the 10 ns industrial-grade version in TSOP II.
Pin-compatible alternatives include other 16 Mbit async SRAMs in the same 54-TSOP II footprint from ISSI (IS61WV102416BLL) or Alliance Memory (AS7C34096A). The key difference is access time and supply voltage — verify your bus timing and voltage rails before substituting. The CY7C1061GE-10ZSXI is a 5 V, 10 ns part; some alternatives are 3.3 V only or have slower access.