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Infineon Technologies CY7C1061GE-10BVXIT — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1061GE-10BVXIT SRAM, 16Mbit, 10 ns, 48-VFBGA

MPNCY7C1061GE-10BVXIT
Active

Infineon CY7C1061GE-10BVXIT, asynchronous SRAM, 16Mbit organized 1M x 16, 10 ns access time, parallel interface, 4.5V-5.5V supply, -40°C to 85°C, 48-VFBGA (6x8), Tape & Reel.

$38.5000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1061GE-10BVXIT specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage4.5V ~ 5.5V
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTape & Reel (TR)
TechnologySRAM - Asynchronous
Access time10 ns
Memory size16Mbit
Memory formatSRAM
Case48-VFBGA
Memory organization1M x 16
Write cycle time - word, page10ns

Product details

The CY7C1061GE-10BVXIT is a 16 Mbit asynchronous SRAM organized as 1M x 16 bits with a parallel interface. Access time is 10 ns.

5V supply — legacy system fit

Lifecycle — EOL Hot, plan the last buy

Lifecycle status is EOL Hot.

Frequently asked questions

What is the voltage range for CY7C1061GE-10BVXIT?

The supply voltage range is 4.5 V to 5.5 V, making it directly compatible with legacy 5 V digital systems.

Can CY7C1061GE-10BVXIT replace an existing SRAM in a 5V system?

Yes — the 4.5 V to 5.5 V supply range, 10 ns access time, and 1M x 16 organization allow it to replace a 5 V asynchronous SRAM with matching pinout and timing, provided the footprint matches the 48-VFBGA package.

What is the datasheet for CY7C1061GE-10BVXIT?

The datasheet covers the full timing parameters, DC characteristics, and package drawing for the CY7C1061 family. The base product number is CY7C1061.