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Infineon Technologies CY7C1061GE-10BV1XIT — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1061GE-10BV1XIT SRAM, 16Mbit, 10 ns, 48-VFBGA

MPNCY7C1061GE-10BV1XIT
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Infineon CY7C1061GE-10BV1XIT asynchronous SRAM, 16Mbit (1M x 16), 10 ns access time, parallel interface, 4.5V to 5.5V supply, -40°C to 85°C industrial temperature, 48-VFBGA (6x8 mm) surface-mount package, Tape & Reel.

$27.5000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1061GE-10BV1XIT specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage4.5V ~ 5.5V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTape & Reel (TR)
TechnologySRAM - Asynchronous
Access time10 ns
Memory size16Mbit
Memory formatSRAM
Case48-VFBGA
Memory organization1M x 16
Write cycle time - word, page10ns

Product details

16Mbit asynchronous SRAM with 10 ns access — bus timing margin for 5V systems

This is a volatile memory for high-speed data buffering, cache, or working memory in embedded systems where deterministic read/write timing matters.

For a 16-bit wide memory, that is 200 MB/s peak bandwidth. This matters when the processor or DMA controller needs to fetch or store data without stalling — for example, in a network packet buffer, a display frame buffer, or a real-time control loop. The 10 ns write cycle time (word, page) is the same figure, so back-to-back writes keep pace with reads.

Industrial temperature range and 5V supply — deployment context

If your system runs on 3.3V only, this part is not a fit — the supply floor is 4.5V.

Package and footprint — 48-VFBGA (6x8 mm)

The PCB layout needs via-in-pad or microvias for the inner balls, and the reflow profile must follow the JEDEC MSL rating (check the bag label — MSL 3 is common for this package type).

Frequently asked questions

What is the access time of CY7C1061GE-10BV1XIT?

The access time is 10 ns for both read and write cycles (word, page). This is the same as the write cycle time, so the part can sustain back-to-back reads and writes at 100 MHz bus speed.