The 1M x 16 organization maps directly to a 16-bit microcontroller or DSP external memory bus without byte-lane muxing, saving a few glue-logic gates.
Infineon CY7C1061GE-10BV1XI 16Mbit Async SRAM, 10 ns
MPNCY7C1061GE-10BV1XI
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Infineon CY7C1061GE-10BV1XI, 16Mbit asynchronous SRAM, 10 ns access time, 1M x 16 organization, 4.5V-5.5V supply, -40°C to 85°C, 48-VFBGA (6x8 mm), Tray.
$27.5000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026
Specifications
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 4.5V ~ 5.5V |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 85°C (TA) |
| Package | Tray |
| Technology | SRAM - Asynchronous |
| Access time | 10 ns |
| Memory size | 16Mbit |
| Memory format | SRAM |
| Case | 48-VFBGA |
| Memory organization | 1M x 16 |
| Write cycle time - word, page | 10ns |
Product details
Frequently asked questions
What is the access time of CY7C1061GE-10BV1XI?
The access time is 10 ns.
Does CY7C1061GE-10BV1XI have a lead-free (RoHS) version?
The 'I' suffix in the order code indicates a lead-free, RoHS-compliant finish. The part is suitable for RoHS-regulated assemblies.