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Infineon Technologies CY7C1061G30-10BV1XI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1061G30-10BV1XI 16Mbit Async SRAM, 10 ns

MPNCY7C1061G30-10BV1XI
Active

Infineon CY7C1061G30-10BV1XI asynchronous SRAM, 16Mbit, 1M x 16 organization, 10 ns access time, 2.2V to 3.6V supply, -40°C to 85°C industrial temperature, 48-VFBGA (6x8) tray.

$24.7600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1061G30-10BV1XI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage2.2V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Asynchronous
Access time10 ns
Memory size16Mbit
Memory formatSRAM
Case48-VFBGA
Memory organization1M x 16
Write cycle time - word, page10ns

Product details

The parallel interface and 2.2V to 3.6V supply range let it drop into existing 2.5V or 3.3V memory buses without level translation.

Industrial temperature and BGA layout

The 1M x 16 organization maps cleanly to a 16-bit data bus; for a 32-bit processor, two devices can be paired with shared address and chip-enable lines.

Sourcing posture

Listed as Active by Infineon, so no last-time-buy clock is running for this part.

Frequently asked questions

Is CY7C1061G30-10BV1XI obsolete or end-of-life?

There is no announced end-of-life or last-time-buy window for this order code.

What is the access time of CY7C1061G30-10BV1XI?

The access time is 10 ns, which allows zero-wait-state operation with many 16-bit and 32-bit processors running at clock speeds up to 100 MHz.