Infineon Technologies
Infineon CY7C1061G30-10BV1XI asynchronous SRAM, 16Mbit, 1M x 16 organization, 10 ns access time, 2.2V to 3.6V supply, -40°C to 85°C industrial temperature, 48-VFBGA (6x8) tray.
MOQ 1 · Tray · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 2.2V ~ 3.6V |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 85°C (TA) |
| Package | Tray |
| Technology | SRAM - Asynchronous |
| Access time | 10 ns |
| Memory size | 16Mbit |
| Memory format | SRAM |
| Case | 48-VFBGA |
| Memory organization | 1M x 16 |
| Write cycle time - word, page | 10ns |
The parallel interface and 2.2V to 3.6V supply range let it drop into existing 2.5V or 3.3V memory buses without level translation.
The 1M x 16 organization maps cleanly to a 16-bit data bus; for a 32-bit processor, two devices can be paired with shared address and chip-enable lines.
Listed as Active by Infineon, so no last-time-buy clock is running for this part.
