Skip to main content
Infineon Technologies CY7C1061G30-10BV1XE — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1061G30-10BV1XE Infineon 16Mbit Async SRAM, 10 ns

MPNCY7C1061G30-10BV1XE
Active

Infineon CY7C1061G30-10BV1XE, 16Mbit asynchronous SRAM, 1M x 16, 10 ns access time, parallel interface, 2.2 V to 3.6 V supply, -40°C to 125°C, 48-VFBGA (6x8 mm) package, tray.

$28.8750Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1061G30-10BV1XE specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage2.2V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C~125°C(TA)
PackageTray
TechnologySRAM - Asynchronous
Access time10 ns
Memory size16Mbit
Memory formatSRAM
Case48-VFBGA
Memory organization1M x 16
Write cycle time - word, page10ns

Product details

What this SRAM does in the system

The Infineon CY7C1061G30-10BV1XE is a 16Mbit asynchronous SRAM organized as 1M x 16 bits.

Access time is 10 ns for both read and write cycles.

The 48-VFBGA (6x8 mm) package ships in a tray.

Frequently asked questions

What is the access time of CY7C1061G30-10BV1XE?

The access time is 10 ns for both read and write cycles, with a write cycle time of 10 ns as well. That gives symmetric bus timing for a 100 MHz bus without extra wait states.