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Infineon Technologies CY7C1061G18-15BV1XIT — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1061G18-15BV1XIT 16Mbit Async SRAM, 15 ns

MPNCY7C1061G18-15BV1XIT
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Infineon Technologies CY7C1061G18-15BV1XIT asynchronous SRAM, 16Mbit, 1M x 16 organization, 15 ns access time, 1.65 V ~ 2.2 V supply, 48-VFBGA package, Tape & Reel.

$48.1250Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1061G18-15BV1XIT specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.65V ~ 2.2V
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTape & Reel (TR)
TechnologySRAM - Asynchronous
Access time15 ns
Memory size16Mbit
Memory formatSRAM
Case48-VFBGA
Memory organization1M x 16
Write cycle time - word, page15ns

Product details

16 Mbit asynchronous SRAM in a 48-ball VFBGA

The CY7C1061G18-15BV1XIT: It runs on a 1.65 V to 2.2 V supply rail, which places it in the low-voltage SRAM segment common on battery-backed or power-sensitive boards. The 48-VFBGA (6x8 mm) package keeps the footprint compact, but the 0.5 mm ball pitch means the board layout needs a controlled-impedance fan-out — a two-layer board may struggle to route all 48 balls cleanly.

Timing and temperature grade

Both the access time and the write cycle time (word, page) are rated at 15 ns, so read and write latencies are symmetric — no penalty for mixed traffic.

Package rework reality

Under a hot-air station, the small body heats quickly, but the risk is the adjacent passives shifting before the balls reflow. A pre-bake at 125°C for 8 hours (per J-STD-033 for MSL 3) is mandatory before any rework; skipping it risks pad cratering under the corner balls.

Frequently asked questions

How do I get current pricing and availability for CY7C1061G18-15BV1XIT?

Submit an RFQ through this listing. No stock-holding claim is made — each request is checked against live distributor inventory.