Skip to main content
Infineon Technologies CY7C1061AV33-10BAXIT — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1061AV33-10BAXIT SRAM, 16Mbit, 10 ns, Obsolete

MPNCY7C1061AV33-10BAXIT
Obsolete

Infineon CY7C1061AV33-10BAXIT, 16Mbit asynchronous SRAM, 10 ns access time, 1M x 16 organization, 3V to 3.6V supply, -40°C to 85°C, 60-FBGA (8x20), Tape & Reel.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1061AV33-10BAXIT specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage3V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTape & Reel (TR)
TechnologySRAM - Asynchronous
Access time10 ns
Memory size16Mbit
Memory formatSRAM
Case60-TFBGA
Memory organization1M x 16
Write cycle time - word, page10ns

Product details

This part is designed for high-speed data buffering, cache, and frame-store applications in networking, telecom, and industrial control equipment where deterministic read/write timing matters.

10 ns access — timing margin in a 60-FBGA footprint

In a system with a 100 MHz bus, that 10 ns window sets the address-to-data valid delay — the designer needs to budget trace length, capacitive loading, and setup/hold on the controller side. The 10 ns write cycle time (word, page) matches the read access, so back-to-back transactions run without dead cycles as long as the controller meets the timing.

Frequently asked questions

What is a replacement for CY7C1061AV33-10BAXIT?

No official replacement order code is recorded. A functional replacement would be a 16Mbit asynchronous SRAM in a 60-FBGA package, 10 ns access time, 3.3V supply, organized 1M x 16. Several semiconductor vendors offer pin-compatible parts in this density and speed grade; verify the footprint and timing against your controller before substituting.