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Infineon Technologies CY7C10612GE30-10ZSXI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C10612GE30-10ZSXI 16Mbit Async SRAM, 10 ns

MPNCY7C10612GE30-10ZSXI
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Infineon CY7C10612GE30-10ZSXI, 16Mbit asynchronous SRAM, 10 ns access time, 1M x 16 organization, 3V-3.6V supply, -40°C to 85°C, 54-TSOP II, Tray.

$110.0000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C10612GE30-10ZSXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage3V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Asynchronous
Access time10 ns
Memory size16Mbit
Memory formatSRAM
Case54-TSOP (0.400\", 10.16mm Width)
Memory organization1M x 16
Write cycle time - word, page10ns

Product details

That 10 ns figure is the time from address change to valid data on the outputs — it sets the minimum bus cycle time when the memory is used without wait states. For a 16-bit data bus running at 66 MHz (15 ns period), a 10 ns access leaves 5 ns of setup margin to the controller's data latch. At 100 MHz (10 ns period), the margin disappears and the controller must insert a wait state or use a synchronous SRAM instead.

Package and footprint — 54-TSOP II

The part comes in a 54-TSOP II package (0.400" body width, 10.16 mm), surface-mount. The TSOP II footprint is a standard JEDEC outline shared across many 16 Mbit asynchronous SRAMs from multiple vendors, so the PCB layout is portable if a second source is needed later. The supplier device package is 54-TSOP II — the same as the package / case field, just the Infineon naming.

Frequently asked questions

What is the datasheet for CY7C10612GE30-10ZSXI?

Engineers need exact electrical and timing specs for design validation.

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Is CY7C10612GE30-10ZSXI obsolete or end-of-life?

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What is the equivalent of CY7C10612GE30-10ZSXI?

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