Infineon CY7C1059DV33-12ZSXQT, 8Mbit asynchronous SRAM, 1M x 8 organization, 12 ns access time, parallel interface, 3V–3.6V supply, -40°C to 85°C, 44-TSOP II, Tape & Reel.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 3V ~ 3.6V |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 85°C (TA) |
| Package | Tape & Reel (TR) |
| Technology | SRAM - Asynchronous |
| Access time | 12 ns |
| Memory size | 8Mbit |
| Memory format | SRAM |
| Case | 44-TSOP (0.400\", 10.16mm Width) |
| Memory organization | 1M x 8 |
| Write cycle time - word, page | 12ns |
The Infineon CY7C1059DV33-12ZSXQT is an 8Mbit asynchronous SRAM organized as 1M x 8, with a 12 ns access time and a parallel interface. It operates from a 3V to 3.6V supply and is rated for -40°C to 85°C.
A 12 ns access time means the SRAM presents valid data on the data bus within 12 ns of the address being latched.
No official replacement order code is listed by Infineon. For new designs, evaluate current-production asynchronous SRAMs in 44-TSOP II from ISSI, Alliance Memory, or Renesas — verify pin-compatibility against your layout.
Yes, the supply voltage range is 3V to 3.6V, making it directly compatible with a 3.3V logic rail.
The pinout follows the standard 44-TSOP II footprint for a 1M x 8 asynchronous SRAM. The datasheet (available on request) provides the full pin assignment and timing diagrams.