Infineon Technologies
Infineon CY7C1051H30-10ZSXI, Asynchronous SRAM, 8Mbit (512K x 16), Parallel Interface, 10 ns Access Time, 2.2V to 3.6V Supply, -40°C to 85°C, 44-TSOP II (0.400", 10.16mm Width), Tray.
MOQ 1 · Tray · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 2.2V ~ 3.6V |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 85°C (TA) |
| Package | Tray |
| Technology | SRAM - Asynchronous |
| Access time | 10 ns |
| Memory size | 8Mbit |
| Memory format | SRAM |
| Case | 44-TSOP (0.400\", 10.16mm Width) |
| Memory organization | 512K x 16 |
| Write cycle time - word, page | 10ns |
Housed in a 44-TSOP II (0.400", 10.16 mm width) package, this is a standard JEDEC surface-mount footprint that reflows well with a typical lead-free profile. The TSOP II body is narrow enough for dense board layouts but still hand-solderable under a microscope for rework.
For a new design this means no LTB risk on the horizon; for a sustaining BOM it means the line can be dual-sourced with a qualified alternate without worrying about a sudden discontinuation.
