Infineon CY7C1051DV33-12BAXI, asynchronous SRAM, 8Mbit (512K x 16), 12 ns access time, 3V–3.6V supply, -40°C to 85°C, 48-FBGA (6x8 mm), tray.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 3V ~ 3.6V |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 85°C (TA) |
| Package | Tray |
| Technology | SRAM - Asynchronous |
| Access time | 12 ns |
| Memory size | 8Mbit |
| Memory format | SRAM |
| Case | 48-TFBGA |
| Memory organization | 512K x 16 |
| Write cycle time - word, page | 12ns |
The CY7C1051DV33-12BAXI is a 8 Mbit asynchronous SRAM organized as 512K words by 16 bits. The 12 ns access time and 12 ns write cycle time (word, page) make it suitable for moderate-speed cache, buffer, or scratchpad memory in embedded systems where the host bus can tolerate a 12 ns window.
For a drop-in alternative, a buyer would need to evaluate other 8 Mbit asynchronous SRAMs in a 48-ball FBGA package with a 12 ns or faster access time and a 3.3V supply. Without a documented cross-reference, each candidate must be verified against the original footprint and timing.