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Infineon Technologies CY7C1049GE30-10ZSXI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1049GE30-10ZSXI SRAM, 4Mbit, 10 ns, 44-TSOP

MPNCY7C1049GE30-10ZSXI
Active

Infineon CY7C1049GE30-10ZSXI, asynchronous SRAM, 4Mbit (512K x 8), 10 ns access time, parallel interface, 2.2V-3.6V supply, -40°C to 85°C, 44-TSOP II, Tray.

$5.6963Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1049GE30-10ZSXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage2.2V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Asynchronous
Access time10 ns
Memory size4Mbit
Memory formatSRAM
Case44-TSOP (0.400\", 10.16mm Width)
Memory organization512K x 8
Write cycle time - word, page10ns

Product details

The CY7C1049GE30-10ZSXI: The parallel interface uses a standard byte-wide data bus and 19 address lines, so it drops into legacy designs or new builds that need fast scratchpad or frame buffers.

Housed in a 44-TSOP II (0.400" body width, 10.16 mm), this is a surface-mount part.

For replacement of a failed SRAM in an existing board, the active status also means the original manufacturer channel is still open, so you are not forced into the spot market unless you need immediate fill.

Frequently asked questions

What is the access time of CY7C1049GE30-10ZSXI?

This speed allows zero-wait-state operation with most MCUs running up to about 50 MHz.